MS1001 Datasheet PDF - Microsemi

Manufacturer:	Microsemi
Category:	BJTs
Case Package:	M-174
Description:	RF Power Bipolar Transistor, 1Element, High Frequency Band, Silicon, NPN, 0.5INCH, PLASTIC, M174, 4Pin
Documentation:	MS1001 Datasheet (3 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

MS1001 Specifications

TYPE	DESCRIPTION
Mounting Style	Screw
Number of Pins	4 Pin
Case/Package	M-174
Power Dissipation	270000 mW
Breakdown Voltage (Collector to Emitter)	18 V
Gain	13 dB
hFE Min	20 @5A, 5V
Input Power (Max)	270 W
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	270000 mW