| TYPE | DESCRIPTION |
|---|
| Mounting Style | Chassis |
| Number of Pins | 4 Pin |
| Case/Package | M-216 |
| Breakdown Voltage (Collector to Emitter) | 65 V |
| Gain | 7.6 dB |
| hFE Min | 10 @5A, 5V |
| Input Power (Max) | 940 W |
| Operating Temperature (Max) | 200 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 940000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Bulk |
| Operating Temperature | 200℃ (TJ) |
RF Transistor NPN 65V 24A 960MHz ~ 1.215GHz 940W Chassis Mount M216
Microsemi
4 Pages / 0.48 MByte
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