MS2473 Datasheet PDF - Microsemi

Manufacturer:	Microsemi
Category:	BJTs
Case Package:	M-112
Description:	RF Power Bipolar Transistor, 1Element, L Band, Silicon, NPN, 0.400 X 0.5INCH, HERMETIC SEALED, 2LFL, M112, 2Pin
Documentation:	MS2473 Datasheet (2 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

Click page to view the detail

MS2473 Specifications

TYPE	DESCRIPTION
Mounting Style	Screw
Number of Pins	3 Pin
Case/Package	M-112
Power Dissipation	2300 W
Breakdown Voltage (Collector to Emitter)	65 V
Gain	6 dB
hFE Min	5 @1A, 5V
Input Power (Max)	2300 W
Operating Temperature (Max)	200 ℃
Operating Temperature (Min)	-65 ℃
Power Dissipation (Max)	2300000 mW