| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -60.0 V |
| Current Rating | -30.0 A |
| Case/Package | TO-263-3 |
| Drain to Source Resistance (on) (Rds) | 80.0 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 3 W |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 30.0 A |
| Rise Time | 25.9 ns |
| Input Capacitance (Ciss) | 2190pF @25V(Vds) |
| Input Power (Max) | 3 W |
| Fall Time | 52.4 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3W (Ta), 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.29 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
●30 AMPERES, 60 VOLTS
●R
●DS(on)
●= 80 m
●Ω
●This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●Features
●Avalanche Energy Specified
●IDSS and VDS(on) Specified at Elevated Temperature
●Pb−Free Packages are Available
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