| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | DPAK |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 20A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
Power MOSFET 20 Amps, 60 Volts N−Channel DPAK
●This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. This energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●•Avalanche Energy Specified
●•Source−to−Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
●•Diode is Characterized for Use in Bridge Circuits
●•IDSSand VDS(on)Specified at Elevated Temperature
ON Semiconductor
11 Pages / 0.28 MByte
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TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.08Ω
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Trans MOSFET N-CH 60V 20A 3Pin(2+Tab) DPAK T/R
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TMOS POWER FET LOGIC LEVEL 20 AMPERES 60 VOLTS RDS(on) = 0.045Ω
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TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on)= 0.045Ω
Motorola
TMOS POWER FET 20 AMPERES 60 VOLTS RDS(on) = 0.08Ω
Motorola
Power Field-Effect Transistor, 20A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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