| TYPE | DESCRIPTION |
|---|
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 60 ns |
| Input Capacitance (Ciss) | 500pF @25V(Vds) |
| Input Power (Max) | 1.5 W |
| Fall Time | 50 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3900 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 175℃ |
12 AMPERES 60 VOLTS RDS(on)= 150 mΩ
●This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●•Avalanche Energy Specified
●• IDSS and VDS(on) Specified at Elevated Temperature
ON Semiconductor
5 Pages / 0.45 MByte
Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.18Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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