| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-252 |
| Polarity | N-CH |
| Drain to Source Voltage (Vds) | 100 V |
| Continuous Drain Current (Ids) | 9A |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
Power MOSFET 9 Amps, 100 Volts N–Channel DPAK
● This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●•Avalanche Energy Specified
●•Source–to–Drain Diode Recovery Time Comparable to a
●Discrete Fast Recovery Diode
●•Diode is Characterized for Use in Bridge Circuits
●•IDSSand VDS(on)Specified at Elevated Temperature
●•Replaces MTD6N10
ON Semiconductor
33 Pages / 0.59 MByte
ON Semiconductor
12 Pages / 0.1 MByte
Motorola
Trans MOSFET N-CH 100V 9A 3Pin(2+Tab) DPAK Rail
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