| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -100 V |
| Current Rating | -12.0 A |
| Case/Package | TO-220-3 |
| Drain to Source Resistance (on) (Rds) | 300 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 75W (Tc) |
| Input Capacitance | 920 pF |
| Gate Charge | 50.0 nC |
| Drain to Source Voltage (Vds) | 100 V |
| Breakdown Voltage (Drain to Source) | 100 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Input Capacitance (Ciss) | 920pF @25V(Vds) |
| Input Power (Max) | 75 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 75W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
This Power MOSFET is designed for medium voltage, high speed power switching applications such as switching regulators, converters, solenoid and relay drivers.
●Features
●•Silicon Gate for Fast Switching Speeds − Switching Times Specified at 100°C
●•Designer’s Data − IDSS, VDS(on), VGS(th)and SOA Specified at Elevated Temperature
●•Rugged − SOA is Power Dissipation Limited
●•Source−to−Drain Diode Characterized for Use With Inductive Loads
●•Pb−Free Package is Available
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