TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | -60.0 V |
Current Rating | -12.0 A |
Case/Package | TO-220-3 |
Power Dissipation | 60W (Tc) |
Drain to Source Voltage (Vds) | 60 V |
Continuous Drain Current (Ids) | 12.0 A |
Rise Time | 50 ns |
Input Capacitance (Ciss) | 770pF @25V(Vds) |
Input Power (Max) | 60 W |
Fall Time | 39 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 60W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Unknown |
Packaging | Tube |
Operating Temperature | -55℃ ~ 175℃ (TJ) |
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●Features
●• Avalanche Energy Specified
●• IDSS and VDS(on) Specified at Elevated Temperature
●• Pb−Free Package is Available
ON Semiconductor
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TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.23Ω
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TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.3Ω
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TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.23Ω
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