| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 12.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.1 Ω |
| Polarity | N-Channel |
| Power Dissipation | 48 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 60 V |
| Breakdown Voltage (Drain to Source) | 60.0 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 12.0 A |
| Rise Time | 190 ns |
| Input Capacitance (Ciss) | 570pF @25V(Vds) |
| Input Power (Max) | 48 W |
| Fall Time | 90 ns |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 48 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -65℃ ~ 175℃ |
The MTP3055VL is a N-channel Logic Level MOSFET designed specifically for low voltage, high speed switching applications. This MOSFET features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies). The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
● Critical DC electrical parameters specified at elevated temperature
● Low drive requirements allowing operation directly from logic drivers
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