| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Voltage Rating (DC) | 60.0 V |
| Current Rating | 32.0 A |
| Case/Package | TO-220-3 |
| Polarity | N-CH |
| Power Dissipation | 90W (Tc) |
| Drain to Source Voltage (Vds) | 60 V |
| Continuous Drain Current (Ids) | 32.0 A |
| Rise Time | 138 ns |
| Input Capacitance (Ciss) | 1700pF @25V(Vds) |
| Power Dissipation (Max) | 90W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Bulk |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
32 AMPERES 60 VOLTS RDS(on)= 40 mΩ
●This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●•Avalanche Energy Specified
●•IDSSand VDS(on)Specified at Elevated Temperature
ON Semiconductor
7 Pages / 0.2 MByte
ON Semiconductor
11 Pages / 0.11 MByte
Motorola
TMOS POWER FET 32 AMPERES 60 VOLTS RDS(on) = 0.04Ω
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