TMOS E-FET™ Power Field Effect Transistor
●N–Channel Enhancement–Mode Silicon Gate
●This advanced TMOS E–FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
●• Avalanche Energy Specified
●• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
●• Diode is Characterized for Use in Bridge Circuits
●• IDSS and VDS(on) Specified at Elevated Temperature
Freescale
8 Pages / 0.24 MByte
Motorola
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028Ω
Freescale
TMOS V Power Field Effect Transistor
Motorola
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.032Ω
Motorola
TMOS POWER FET 42 AMPERES 60 VOLTS RDS(on) = 0.028Ω
Freescale
TMOS POWER FET 50 AMPERES 60 VOLTS RDS(on) = 0.028Ω
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