| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -50.0 A |
| Case/Package | TO-220-3 |
| Power Rating | 125 W |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | P-Channel |
| Power Dissipation | 125 W |
| Threshold Voltage | 1.5 V |
| Input Capacitance | 3500pF @25V |
| Gate Charge | 100 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±15.0 V |
| Continuous Drain Current (Ids) | 50.0 A |
| Rise Time | 340 ns |
| Input Capacitance (Ciss) | 4900pF @25V(Vds) |
| Input Power (Max) | 125 W |
| Fall Time | 218 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Height | 14.48 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The MTP50P03HDLG is a -30V P-channel Power MOSFET designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain to source diode with a fast recovery time. The MOSFET is ideal for low voltage, high speed switching applications in power supplies, converters and PWM motor controls. It is particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.
● Avalanche energy specified
● Source to drain diode recovery time comparable to a discrete fast recovery diode
● Diode is characterized for use in bridge circuits
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Motorola
TMOS POWER FET LOGIC LEVEL 50 AMPERES 30 VOLTS RDS(on) = 0.025Ω
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