| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -50.0 V |
| Current Rating | -100 mA |
| Case/Package | SOT-23-3 |
| Halogen Free Status | Halogen Free |
| Polarity | PNP |
| Power Dissipation | 0.338 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 35 @5mA, 10V |
| hFE Max | 35 |
| Input Power (Max) | 230 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 338 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.9 mm |
| Size-Width | 1.5 mm |
| Size-Height | 1.09 mm |
| Operating Temperature | -55℃ ~ 150℃ |
PNP Transistors with Monolithic Bias Resistor Network
●This series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space.
●Features
●• Simplifies Circuit Design
●• Reduces Board Space
●• Reduces Component Count
●• S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable
●• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ON Semiconductor
12 Pages / 0.14 MByte
ON Semiconductor
15 Pages / 0.2 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
18 Pages / 0.94 MByte
ON Semiconductor
6 Pages / 0.05 MByte
ON Semiconductor
20 Pages / 0.22 MByte
ON Semiconductor
1 Pages / 0.14 MByte
Motorola
PNP SILICON BIAS RESISTOR TRANSISTOR
Leshan Radio
50V, bias resistor transistor
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