TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 100 mA |
Case/Package | SC-70-6 |
Halogen Free Status | Halogen Free |
Polarity | N-Channel, NPN |
Power Dissipation | 0.385 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
hFE Min | 35 @5mA, 10V |
Input Power (Max) | 250 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 385 mW |
Supply Voltage | 2 V |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2 mm |
Size-Width | 1.25 mm |
Size-Height | 0.9 mm |
Operating Temperature | -55℃ ~ 150℃ |
The MUN5211DW1T1G is a dual NPN Bipolar Digital Transistor designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors, a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device.
● Simplifies circuit design
● Reduces board space
● Reduces component count
ON Semiconductor
8 Pages / 0.07 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.05 MByte
ON Semiconductor
1 Pages / 0.14 MByte
Leshan Radio
Dual Bias Resistor Transistors
Motorola
Dual Bias Resistor Trasnsistors
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon,
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