| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Voltage Rating (DC) | 50.0 V |
| Current Rating | 100 mA |
| Case/Package | SC-70-6 |
| Halogen Free Status | Halogen Free |
| Polarity | N-Channel, NPN |
| Power Dissipation | 0.385 W |
| Breakdown Voltage (Collector to Emitter) | 50 V |
| Continuous Collector Current | 100mA |
| hFE Min | 160 @5mA, 10V |
| Input Power (Max) | 250 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 385 mW |
| Supply Voltage | 1.4 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.2 mm |
| Size-Width | 1.35 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
Dual Bias ResistorTransistors
●NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
●The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.
●Features
●• Simplifies Circuit Design
●• Reduces Board Space
●• Reduces Component Count
●• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ON Semiconductor
8 Pages / 0.07 MByte
ON Semiconductor
36 Pages / 0.15 MByte
Motorola
Dual Bias Resistor Trasnsistors
Leshan Radio
Dual Bias Resistor Transistors
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Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon,
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