TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Voltage Rating (DC) | 50.0 V |
Current Rating | 100 mA |
Case/Package | SC-70-6 |
Halogen Free Status | Halogen Free |
Polarity | N-Channel, NPN |
Power Dissipation | 0.385 W |
Breakdown Voltage (Collector to Emitter) | 50 V |
Continuous Collector Current | 100mA |
hFE Min | 160 @5mA, 10V |
Input Power (Max) | 250 mW |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 385 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Dual Bias ResistorTransistors
●NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
●The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base−emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1G series, two BRT devices are housed in the SOT−363 package which is ideal for low power surface mount applications where board space is at a premium.
●Features
●• Simplifies Circuit Design
●• Reduces Board Space
●• Reduces Component Count
●• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
ON Semiconductor
6 Pages / 0.1 MByte
ON Semiconductor
36 Pages / 0.15 MByte
ON Semiconductor
6 Pages / 0.05 MByte
Leshan Radio
Dual Bias Resistor Transistors
Motorola
Dual Bias Resistor Trasnsistors
Leshan Radio
Small Signal Bipolar Transistor, 0.1A I(C), 2-Element, NPN, Silicon,
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