The ON Semiconductor serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed Static Random Access Memory, internally organized as 128 K words by 8 bits. The devices are designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used and in QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. The devices can operate over a wide temperature range of −40°C to +85°C and are available in a 8-lead TSSOP package. The N01S830xA device has two different variations, a HOLD version that allows communication to the device to be paused and a battery back-up (BBU) version to be used with a battery to retain data when power is lost.
●Features
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●Power Supply Range:
● 2.5 to 5.5 V
●Very Low Typical Standby Current:
● < 4 µA
●Very Low Operating Current:
● < 10 mA
●Simple Serial Interface
● \- Single-bit SPI Access \- DUAL-bit and QUAD-bit SPI-like Access
●Flexible Operating Modes
● \- Word Mode \- Page Mode \- Burst Mode (Full Array)
●High Frequency Read and Write Operation
● \- Clock Frequency 20 MHz
●Functional Options
●\- HOLD Pin for Pausing Operation
●\- VBAT Pin for Battery−Back up
● Built-in Write Protection (CS High)
●High Reliability
●\- Unlimited Write Cycles
