| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-251 |
Features
● V DS =30V,I D =80A
●R DS(ON) <6.5m? @ V GS =10V
●R DS(ON) < 10m? @ V GS =5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
NCE Power
7 Pages / 0.28 MByte
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
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