| TYPE | DESCRIPTION |
|---|
| Case/Package | TO-251 |
Features
● VDS =30V,ID =80A
● RDS(ON) <6.5mΩ @ VGS=10V
● RDS(ON) < 10mΩ @ VGS=5V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
NCE Power
7 Pages / 0.31 MByte
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
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