| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Case/Package | TO-220 |
Features
● V DS =60V,I D =50A
●R DS(ON) <20m? @ V GS =10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high E AS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
NCE Power
7 Pages / 0.35 MByte
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
The NCE6050AK uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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