TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-251 |
Features
● VDS =60V,ID =50A
● RDS(ON) <20mΩ @ VGS=10V
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
● Special process technology for high ESD capability
NCE Power
7 Pages / 0.33 MByte
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
The NCE6050AK uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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