TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Case/Package | TO-220 |
Features
● VDS = 82V,ID =140A
●RDS(ON) < 6mΩ @ VGS=10V (Typ:4.3mΩ)
● Special process technology for high ESD capability
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Good stability and uniformity with high EAS
● Excellent package for good heat dissipation
NCE Power
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NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
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NCE N-Channel Enhancement Mode Power MOSFET
NCE Power
NCE N-Channel Enhancement Mode Power MOSFET
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