| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Supply Voltage (DC) | 4.50V (min) |
| Case/Package | SOIC-8 |
| Rise/Fall Time | 16ns, 11ns |
| Number of Outputs | 2 Output |
| Number of Positions | 8 Position |
| Fall Time (Max) | 27 ns |
| Fall Time (Max) | 35 ns |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -10 ℃ |
| Supply Voltage | 4.5V ~ 13.2V |
| Supply Voltage (Max) | 13.2 V |
| Supply Voltage (Min) | 4.5 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | 0℃ ~ 150℃ (TJ) |
The NCP5901DR2G is a dual high performance MOSFET Gate Driver optimized to drive the gates of both high-side and low-side power MOSFETs in a synchronous buck converter. It can drive up to 3nF load with a 25ns propagation delay and 20ns transition time. Adaptive anti-cross-conduction and power saving operation circuit can provide a low switching loss and high efficiency solution for notebook and desktop systems. Bidirectional EN pin can provide a fault signal to controller when the gate driver fault detect under OVP, UVLO occur. Also, an under-voltage lockout function guarantees the outputs are low when supply voltage is low.
● Faster rise and fall times
● Adaptive anti-cross-conduction circuit
● Pre OV function
● ZCD detect
● Floating top driver accommodates boost voltages of up to 35V
● Output disable control turn-OFF both MOSFETs
● Under-voltage lockout
● Power saving operation under light load conditions
● Direct interface to NCP6151 and other compatible PWM controllers
ON Semiconductor
1 Pages / 0.17 MByte
ON Semiconductor
9 Pages / 0.13 MByte
ON Semiconductor
MOSFET DRVR 2Out Hi/Lo Side Inv/Non-Inv 8Pin SOIC N T/R
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