| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | TSOT-23-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 2 Ω |
| Power Dissipation | 900 mW |
| Threshold Voltage | 1.9 V |
| Input Capacitance | 20 pF |
| Drain to Source Voltage (Vds) | 50 V |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 20pF @25V(Vds) |
| Input Power (Max) | 700 mW |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 960 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3 mm |
| Size-Width | 1.7 mm |
| Size-Height | 1 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The NDC7002N is a dual N-channel enhancement-mode FET produced using high cell density and DMOS technology. This very high density process has been designed to minimize ON-state resistance, provide rugged and reliable performance and fast switching. This device is particularly suited for low voltage applications requiring a low current high side switch.
● High saturation current
● High density cell design for low RDS (ON)
● Design using copper lead-frame for superior thermal and electrical capabilities
ON Semiconductor
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ON Semiconductor
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