| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 1.8 Ω |
| Polarity | N-Channel |
| Power Dissipation | 30 W |
| Threshold Voltage | 3.9 V |
| Drain to Source Voltage (Vds) | 600 V |
| Rise Time | 9 ns |
| Input Capacitance (Ciss) | 640pF @25V(Vds) |
| Input Power (Max) | 30 W |
| Fall Time | 15 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 30W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.63 mm |
| Size-Width | 4.9 mm |
| Size-Height | 16.12 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Thanks to ON Semiconductor, both your amplification and switching needs can be taken care of with one component: the NDF04N60ZG power MOSFET. Its maximum power dissipation is 30000 mW. This product comes in rail packaging to keep individual parts separated and protected. This N channel MOSFET transistor operates in enhancement mode. This MOSFET transistor has an operating temperature range of -55 °C to 150 °C.
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