TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 60.0 V |
Current Rating | 48.0 A |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.025 Ω |
Polarity | N-Channel |
Power Dissipation | 100 W |
Threshold Voltage | 2.9 V |
Drain to Source Voltage (Vds) | 60 V |
Breakdown Voltage (Drain to Source) | 60.0 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 48.0 A |
Rise Time | 145 ns |
Input Capacitance (Ciss) | 1800pF @25V(Vds) |
Input Power (Max) | 100 W |
Fall Time | 77 ns |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 100W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.7 mm |
Size-Height | 16.3 mm |
Operating Temperature | -65℃ ~ 175℃ (TJ) |
The NDP6060 is a N-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
● Critical DC electrical parameters specified at elevated temperature
● High density cell design for extremely low RDS (ON)
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