| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 5 Ω |
| Power Dissipation | 0.36 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 6.3 ns |
| Input Capacitance (Ciss) | 79pF @25V(Vds) |
| Input Power (Max) | 360 mW |
| Fall Time | 7.5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 360 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
This P-Channel enhancement mode power field effect transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The NDS0605 can be used, with a minimum of effort, in most applications requiring up to 0.18A DC and can deliver pulsed currents up to 1A. This product is particularly suited to low voltage applications requiring a low current high side switch.
●Features
●---
● |
● -0.18 A, -60 V. RDS(ON) = 5 Ω @ VGS= -10 V.
● Voltage controlled p-channel small signal switch.
● High density cell design for extremely low RDS(ON).
● High saturation current.
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