NDS331 Datasheet PDF - Fairchild

General Description

●These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s  proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.

●Features

●■ 1.3 A, 20 V. RDS(ON) = 0.21 W @ VGS= 2.7 V

●                    RDS(ON) = 0.16 W @ VGS= 4.5 V.

●■ Industry standard outline SOT-23 surface mount package using poprietary SuperSOTTM-3 design for superior thermal and electrical capabilities.

●■ High density cell design for extremely low RDS(ON).

●■ Exceptional on-resistance and maximum DC current capability.