TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 3 Pin |
Voltage Rating (DC) | 20.0 V |
Current Rating | 1.30 A |
Case/Package | SOT-23-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.11 Ω |
Polarity | N-Channel |
Power Dissipation | 500 mW |
Threshold Voltage | 700 mV |
Drain to Source Voltage (Vds) | 20 V |
Breakdown Voltage (Drain to Source) | 20.0 V |
Breakdown Voltage (Gate to Source) | 8.00 V |
Continuous Drain Current (Ids) | 1.30 A |
Rise Time | 25 ns |
Input Capacitance (Ciss) | 162pF @10V(Vds) |
Input Power (Max) | 460 mW |
Fall Time | 25 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 500mW (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 2.92 mm |
Size-Width | 1.4 mm |
Size-Height | 0.94 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NDS331N is a N-channel logic level enhancement mode Field Effect Transistor using high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance. Suited for low voltage applications in PCMCIA cards and other battery powered circuits where fast switching and low in-line power loss are needed in a very small outline surface mount package.
● High density cell design for extremely low RDS (ON)
● Exceptional on-resistance and maximum DC current capability
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