NDS335N Datasheet PDF - Fairchild

N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package. Industry standard outline SOT-23 surface mount package using poprietary SuperSTM-3 design for superior thermal and electrical capabilities. High density cell design for extremely low RDS(ON) Exceptional on-resistance and maximum DC current capability.