| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 2 Ω |
| Power Dissipation | 0.3 W |
| Threshold Voltage | 2.1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Maximum Forward Voltage (Max) | 1.2 V |
| Input Capacitance (Ciss) | 20pF @25V(Vds) |
| Input Power (Max) | 300 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.3 mm |
| Size-Height | 0.93 mm |
| Operating Temperature | -65℃ ~ 150℃ |
This N-Channel enhancement mode field effect transistor is produced using Fairchild"s proprietary, high cell density, DMOS technology. This product has been designed to minimize on-state resistance while providing rugged, reliable, and fast switching performance. This can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. This product is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
●Features
●---
● |
● High density cell design for extremely low RDS(ON).
● Voltage controlled small signal switch.
● Rugged and Reliable.
● High saturation current capability.
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