| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 7.30 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 28.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 2.5W (Ta) |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Continuous Drain Current (Ids) | 7.30 A |
| Input Capacitance (Ciss) | 830pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
●General Description
●This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
●These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss and resistance to transients are needed.
●Features
●• 7.3 A, 30 V. RDS(ON) = 28 mΩ @ VGS = 10 V
● RDS(ON) = 42 mΩ @ VGS = 4.5 V
●• High performance trench technology for extremely low RDS(ON)
●• High power and current handling capability in a widely used surface mount package.
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