| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -5.00 A |
| Case/Package | TO-261-4 |
| Number of Positions | 4 Position |
| Drain to Source Resistance (on) (Rds) | 0.065 Ω |
| Polarity | P-Channel |
| Power Dissipation | 3 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | -30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 5.00 A |
| Input Capacitance (Ciss) | 690pF @15V(Vds) |
| Input Power (Max) | 1.1 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 3W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.5 mm |
| Size-Width | 3.56 mm |
| Size-Height | 1.6 mm |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The NDT452AP is a P-channel logic level enhancement mode Field Effect Transistor using high cell density and DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability
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