| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 12 GHz |
| Number of Pins | 4 Pin |
| Case/Package | SMD-1 |
| Power Dissipation | 165 mW |
| Breakdown Voltage (Drain to Source) | 4.00 V |
| Continuous Drain Current (Ids) | 10.0 mA |
| Gain | 13.5 dB |
| Test Current | 10 mA |
| Operating Temperature (Max) | 125 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Voltage Rating | 4 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Bulk |
| Size-Height | 1.5 mm |
DESCRIPTION
●NEC"s NE3210S01 is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AIGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling. Its excellent low noise figure and high associated gain make it suitable for DBS and commercial systems. The NE 3210S01 is housed in a low cost plastic package which is available in tape and reel.
●NEC"s stringent quality assurance and test procedures assure the highest reliability and performance.
●FEATURES
●• SUPER LOW NOISE FIGURE:
● 0.35 dB TYP at f = 12 GHz
●• HIGH ASSOCIATED GAIN:
● 13.5 dB TYP at f = 12 GHz
●• GATE LENGTH: LG ≤ 0.20 μm
●• GATE WIDTH: WG = 160 μm
California Eastern Laboratories
15 Pages / 0.36 MByte
California Eastern Laboratories
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