| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 12 GHz |
| Number of Pins | 4 Pin |
| Current Rating | 15 mA |
| Case/Package | SMD-4 |
| Power Dissipation | 165 mW |
| Breakdown Voltage (Drain to Source) | 4.00 V |
| Continuous Drain Current (Ids) | 10.0 mA |
| Gain | 13 dB |
| Test Current | 10 mA |
| Voltage Rating | 4 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Tape & Reel (TR) |
| Size-Height | 1.5 mm |
Easily prevent voltage drops in your circuit by using California Eastern Laboratories" NE4210S01-T1B JFET transistor. Its maximum power dissipation is 165 mW. Tape and reel packaging will encase this product during shipment, in order to ensure safe delivery and enable quick mounting of components. It is made in a single dual source configuration. This junction field effect transistor has an operating temperature range of -65 °C to 125 °C.
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