| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Power Dissipation | 125 W |
| Breakdown Voltage (Collector to Emitter) | 390 V |
| Input Power (Max) | 125 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 125000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Height | 2.38 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NGD8205ANT4G is a 300V N-channel Insulated Gate Bipolar Transistor (IGBT) designed for use in ignition, direct fuel injection or wherever high voltage and high current switching is required. The logic level IGBT features monolithic circuitry integrating ESD and overvoltage clamped protection for use in inductive coil drivers applications.
● Ideal for coil on plug and driver on coil applications
● Gate-emitter ESD protection
● Temperature compensated gate-collector voltage clamp limits stress applied to load
● Integrated ESD diode protection
● Low threshold voltage interfaces power loads to logic or microprocessor devices
● Low saturation voltage
● High pulsed current capability
ON Semiconductor
7 Pages / 0.1 MByte
ON Semiconductor
7 Pages / 0.24 MByte
ON Semiconductor
3 Pages / 0.07 MByte
ON Semiconductor
Trans IGBT Chip N-CH 390V 20A 125000mW 3Pin(2+Tab) DPAK Reel
Littelfuse
Trans IGBT Chip N-CH 390V 20A 125000mW 3Pin(2+Tab) DPAK
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
