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NGTB05N60R2DT4G
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NGTB05N60R2DT4G Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:IGBTs
Case Package:TO-252-3
Description:Trans IGBT Chip N-CH 600V 16A 56000mW 3Pin(2+Tab) DPAK T/R
Documentation:NGTB05N60R2DT4G Datasheet (7 Pages)Package Outline Dimension on7 Page
Package Footprint Pad Layout on7 Page
Part Numbering System on1 Page7 Page
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NGTB05N60R2DT4G Datasheet PDF (7 Pages)
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NGTB05N60R2DT4G Specifications

TYPEDESCRIPTION
Mounting StyleSurface Mount
Number of Pins3 Pin
Case/PackageTO-252-3
Number of Positions3 Position
Power Dissipation56 W
Breakdown Voltage (Collector to Emitter)600 V
Reverse recovery time70 ns
Input Power (Max)56 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)56 W
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NGTB05N60R2DT4G Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTape & Reel (TR)
Size-Length6.73 mm
Size-Width6.22 mm
Size-Height2.38 mm
Operating Temperature175℃ (TJ)
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NGTB05N60R2DT4G Documents

NGTB05N60R2DT4G Datasheet
ON Semiconductor
7 Pages / 0.6 MByte
NGTB05N60R2DT4G Other Datasheet PDF
ON Semiconductor
8 Pages / 0.6 MByte

NGTB05N60R2DT4 Documents

NGTB05N60R2DT4G Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 600V 16A 56000mW 3Pin(2+Tab) DPAK T/R
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