| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 117 W |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 270 ns |
| Input Power (Max) | 117 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 117 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.28 mm |
| Size-Width | 4.82 mm |
| Size-Height | 15.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NGTB15N60S1EG is an Insulated Gate Bipolar Transistor features a robust and non-punch through (NPT) Trench construction, provides superior performance in demanding switching applications. Offering both low on state voltage and minimal switching loss, the IGBT is well suited for hard switching applications. Incorporated into the device is a rugged co-packaged reverse recovery diode with a low forward voltage.
● Low saturation voltage resulting in low conduction loss
● Low switching loss in higher frequency applications
● Soft fast reverse recovery diode
● Excellent current versus package size performance density
● 5µs Short-circuit capability
ON Semiconductor
10 Pages / 0.13 MByte
ON Semiconductor
10 Pages / 0.16 MByte
ON Semiconductor
13 Pages / 0.7 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 30A 117000mW 3Pin(3+Tab) TO-220AB Tube
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