| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 341 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 341 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 341 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.25 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.4 mm |
| Operating Temperature | -40℃ ~ 175℃ (TJ) |
The NGTB20N120IHWG is an Insulated Gate Bipolar Transistor features a robust and field-stop (FS) Trench construction, provides and superior performance in demanding switching applications and offers low ON-state voltage with minimal switching loss. The IGBT is well suited for resonant or soft switching applications.
● Extremely efficient Trench with field-stop technology
● Low switching loss - Reduces system power dissipation
● Optimized for low losses in IH cooker application
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