| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 192 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 192 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 192 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.08 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NGTB20N120LWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective field-stop (FS) Trench construction, provides superior performance in demanding switching applications, offering both low ON-state voltage and minimal switching loss. The IGBT is well suited for resonant or soft switching applications. Incorporated into the device is a rugged co-packaged free-wheeling diode with a low forward voltage.
● Low saturation voltage using Trench with field-stop technology
● Low switching loss - Reduces system power dissipation
● Low gate charge
● Low conduction loss
● 5µs Short-circuit capability
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