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NGTB25N120FL3WG
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NGTB25N120FL3WG Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:IGBT Trench Field Stop 1200V 100A 349W Through Hole TO-247-3
Documentation:NGTB25N120FL3WG Datasheet (12 Pages)Package Outline Dimension on11 Page
Part Numbering System on1 Page12 Page
NGTB25N120FL3WG Application Note (11 Pages)
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NGTB25N120FL3WG Datasheet PDF (12 Pages)
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NGTB25N120FL3WG Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Number of Positions3 Position
Power Dissipation349 W
Breakdown Voltage (Collector to Emitter)1200 V
Reverse recovery time114 ns
Input Power (Max)349 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)349000 mW
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NGTB25N120FL3WG Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Size-Length16.25 mm
Size-Width5.3 mm
Size-Height21.4 mm
Operating Temperature-55℃ ~ 175℃ (TJ)
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NGTB25N120FL3WG Documents

NGTB25N120FL3WG Datasheet
ON Semiconductor
12 Pages / 0.21 MByte
NGTB25N120FL3WG Other Datasheet PDF
ON Semiconductor
12 Pages / 0.21 MByte
NGTB25N120FL3WG Application Note
ON Semiconductor
11 Pages / 0.15 MByte

NGTB25N120FL3 Documents

NGTB25N120FL3WG Datasheet PDF
ON Semiconductor
IGBT Trench Field Stop 1200V 100A 349W Through Hole TO-247-3
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