| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Power Dissipation | 192 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 240 ns |
| Input Power (Max) | 192 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 192000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.08 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NGTB25N120FLWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co-packaged free-wheeling diode with a low forward voltage.
● Low saturation voltage using Trench with field-stop technology
● Low switching loss - Reduces system power dissipation
● Low gate charge
● Reduces system power dissipation
● Robust circuit performance
● 10µs Short-circuit capability
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