| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 385 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 154 ns |
| Input Power (Max) | 385 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 385 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.25 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NGTB25N120SWG is an Insulated Gate Bipolar Transistor (IGBT) features a robust and Trench construction, provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited for welding applications. Incorporated into the device is a soft and fast co-packaged free-wheeling diode with a low forward voltage.
● Soft fast reverse recovery diode
● Optimized for high speed switching
● 10µs Short-circuit capability
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