| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 534 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 450 ns |
| Input Power (Max) | 534 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 534 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.25 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.4 mm |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NGTB30N120L2WG IGBT transistor from ON Semiconductor is perfect to use as an electronic switch eliminating the current at the gate. Its maximum power dissipation is 468000 mW. It has a maximum collector emitter voltage of 1200 V. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 175 °C. This device utilizes field stop ii|trench technology.
ON Semiconductor
7 Pages / 0.09 MByte
ON Semiconductor
7 Pages / 0.09 MByte
ON Semiconductor
4 Pages / 0.16 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1200V 60A 468000mW 3Pin(3+Tab) TO-247 Tube
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