TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-247-3 |
Halogen Free Status | Halogen Free |
Number of Positions | 3 Position |
Power Dissipation | 260 W |
Breakdown Voltage (Collector to Emitter) | 1200 V |
Reverse recovery time | 200 ns |
Input Power (Max) | 260 W |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 260 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 16.26 mm |
Size-Width | 5.3 mm |
Size-Height | 21.08 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The NGTB40N120FLWG IGBT transistor from ON Semiconductor will work effectively even with higher currents. It has a maximum collector emitter voltage of 1200 V. Its maximum power dissipation is 260000 mW. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C.
ON Semiconductor
11 Pages / 0.18 MByte
ON Semiconductor
12 Pages / 0.18 MByte
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