| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Halogen Free Status | Halogen Free |
| Number of Positions | 3 Position |
| Power Dissipation | 260 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Input Power (Max) | 260 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 260 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.08 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Use the NGTB40N120LWG IGBT transistor from ON Semiconductor as an electronic switch. Its maximum power dissipation is 260000 mW. It has a maximum collector emitter voltage of 1200 V. This product comes in rail packaging to keep individual parts separated and protected. It is made in a single configuration. This IGBT transistor has an operating temperature range of -55 °C to 150 °C.
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