| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-4 |
| Power Dissipation | 536 W |
| Breakdown Voltage (Collector to Emitter) | 1200 V |
| Reverse recovery time | 281 ns |
| Input Power (Max) | 536 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 536000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
ON Semiconductor
10 Pages / 0.15 MByte
ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 535000mW 3Pin(3+Tab) TO-247 Tube
ON Semiconductor
Trans IGBT Chip N-CH 1200V 200A 536000mW 3Pin(3+Tab) TO-247 Tube
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