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NGTB50N65FL2WG
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NGTB50N65FL2WG Datasheet PDF - ON Semiconductor

Manufacturer:ON Semiconductor
Category:IGBTs
Case Package:TO-247-3
Description:Trans IGBT Chip N-CH 650V 100A 417000mW 3Pin(3+Tab) TO-247 Tube
Documentation:NGTB50N65FL2WG Datasheet (12 Pages)Package Outline Dimension on11 Page
Part Numbering System on1 Page12 Page
NGTB50N65FL2WG Application Note (11 Pages)
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NGTB50N65FL2WG Datasheet PDF (12 Pages)
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NGTB50N65FL2WG Specifications

TYPEDESCRIPTION
Mounting StyleThrough Hole
Number of Pins3 Pin
Case/PackageTO-247-3
Power Dissipation417000 mW
Breakdown Voltage (Collector to Emitter)650 V
Reverse recovery time94 ns
Input Power (Max)417 W
Operating Temperature (Max)175 ℃
Operating Temperature (Min)-55 ℃
Power Dissipation (Max)417000 mW
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NGTB50N65FL2WG Size & Package

TYPEDESCRIPTION
Product Lifecycle StatusActive
PackagingTube
Operating Temperature-55℃ ~ 175℃ (TJ)
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NGTB50N65FL2WG Documents

NGTB50N65FL2WG Datasheet
ON Semiconductor
12 Pages / 0.27 MByte
NGTB50N65FL2WG Other Datasheet PDF
ON Semiconductor
11 Pages / 0.2 MByte
NGTB50N65FL2WG Application Note
ON Semiconductor
11 Pages / 0.2 MByte
NGTB50N65FL2WG Notice File
ON Semiconductor
12 Pages / 1.83 MByte

NGTB50N65FL2 Documents

NGTB50N65FL2WG Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 417000mW 3Pin(3+Tab) TO-247 Tube
NGTB50N65FL2WAG Datasheet PDF
ON Semiconductor
Trans IGBT Chip N-CH 650V 160A 417000mW 3Pin(3+Tab) TO-247 Tube
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