| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Power Dissipation | 595 W |
| Breakdown Voltage (Collector to Emitter) | 650 V |
| Reverse recovery time | 80 ns |
| Input Power (Max) | 595 W |
| Operating Temperature (Max) | 175 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 595000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
The NGTB75N65FL2WG IGBT transistor from ON Semiconductor will work effectively even with higher currents. It has a maximum collector emitter voltage of 650 V. Its maximum power dissipation is 595000 mW. This product comes in rail packaging to keep individual parts separated and protected. This device is made with field stop|trench technology. This IGBT transistor has a minimum operating temperature of -55 °C and a maximum of 175 °C. It is made in a single configuration.
ON Semiconductor
11 Pages / 0.23 MByte
ON Semiconductor
10 Pages / 0.23 MByte
ON Semiconductor
11 Pages / 0.23 MByte
ON Semiconductor
Trans IGBT Chip N-CH 650V 100A 595000mW 3Pin(3+Tab) TO-247 Tube
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